schottky barrier diode BAT750 features z high conductance. z very low forward voltage drop. z for use in dc-dc converter,pcmcia, and mobile telecommunications appilication. applications z 0.75 surface mount schottk y barrier rectifier. sot-23 ordering information type no. marking package code BAT750 k77 sot-23 maximum rating @ ta=25 unless otherwise specified characteristic symbol limits unit peak repetitive reverse voltage working peak reverse voltage dc reverse voltage v rrm v rwm v r 40 v rms reverse voltage v r(rms) 28 v average rectified current i o 750 ma non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load i fsm 5.5 a power dissipation p d 350 mw typical thermal resistance, junction to ambient air r ja 286 /w operating junction temperature range t j 125 storage temperature range t stg -40 to +125 pb lead-free diode semiconductor korea www.diode.kr
schottky barrier diode BAT750 electrical characteristics @ ta=25 unless otherwise specified characteristic symbol min typ max unit test condition reverse breakdown voltage v ( br ) r 40 45 - v i r =300 a forward voltage v f - 225 235 290 340 390 420 475 280 310 350 420 490 540 650 mv i f =50ma i f =100ma i f =250ma i f =500ma i f =750ma i f =1000ma i f =1500ma maximum reverse current i r - 50 100 a v r =30v junction capacitance c j - - 175 25 - - pf v r =0v,f=1.0mhz v r =25v,f=1.0mhz typical characteristics @ ta=25 unless otherwise specified www.diode.kr diode semiconductor korea
schottky barrier diode BAT750 package outline plastic surface mounted package sot-23 soldering footprint unit : mm package information device package shipping BAT750 sot-23 3000/tape&reel sot-23 dim min max a 2.85 2.95 b 1.25 1.35 c 1.0typical d 0.37 0.43 e 0.35 0.48 g 1.85 1.95 h 0.02 0.1 j 0.1typical k 2.35 2.45 all dimensions in mm www.diode.kr diode semiconductor korea
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